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 Inchange Semiconductor
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Product Specification
Silicon NPN Power Transistors
3DD201
DESCRIPTION With TO-3 package High collector-base breakdown voltage : VCBO=350V APPLICATIONS For TV horizontal output applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 350 150 6 8 50 150 -55~150 ae ae UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL R|E jc CHARACTERISTICS Thermal resistance junction to case MAX 1.5 UNIT ae /W
Inchange Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=350V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=10V 40 MIN 150 350 6 TYP.
3DD201
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE
MAX
UNIT V V V
1.5 1.5 0.5 0.1 120
V V mA mA
2
Inchange Semiconductor
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Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
3DD201

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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